Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter

AlGaN/GaN high electron mobility transistor (HEMT) has excellent promise for developing industrially viable optoelectronic logic gates (OELGs). We demonstrate AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter circuit (OLIC) serving as the primary step toward the realization of complex OELGs. The OLIC consists of a Schottky diode (SD) and phototransistor (PT) fabricated on AlGaN/GaN HEMT epi-structure on SiC substrate. The SD and PT work as the load and driver, respectively, so that voltage signals could be easily extracted as the output in response to the electrical and optical inputs with suitable gate biasing. Simple fabrication process and AlGaN/GaN HEMT technological compatibility of our OLIC will provide a promising solution that can be extended to advanced optoelectronic logic computing circuits.