Observation of Large Low‐Field Magnetoresistance in Layered (NdNiO3)n:NdO Films at High Temperatures (Adv. Mater. 11/2025)

Low-Field Magnetoresistance In article number 2415426 by Yanan Zhao, Zhixin Guo, Ming Liu, and co-workers a notable low-field magnetoresistance (1.2×103%, 0.1 T) in the layered (NdNiO3)n:NdO films at a high temperature range (≈90–240 K) is obtained. Such layered phases raise the tunneling barriers and magnetic fluctuations at high temperatures, where small ferromagnetic domains are embedded in the antiferromagnetic domains. The achievement of such notable LFMR at high temperatures would advance the magnetic devices.