兴奋剂
不对称
凝聚态物理
现象学模型
半导体
带隙
材料科学
半导体材料
物理
量子力学
作者
Shou-Cheng Zhang,Su‐Huai Wei,Alex Zunger
摘要
Semiconductors differ widely in their ability to be doped. As their band gap increases, it is usually possible to dope them either n or p type, but not both. This asymmetry is documented here, and explained phenomenologically in terms of the “doping pinning rule.”
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