Microwave Dielectric Properties of ATe3O8 (A = Sn, Zr) Ceramics

ATe 3 O 8 (A = Sn, Zr) ceramics were investigated as a promising dielectric materials for low temperature cofired ceramics (LTCC) applications. The ATe 3 O 8 ceramics were synthesized using solid state reaction method by sintering in the temperature range 600 to 800 °C. The structure and microstructure of the ceramics were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. The dielectric properties of the ceramics were studied in the frequency range 4–6 GHz. The SnTe 3 O 8 ceramic has a dielectric constant ( ε r ) of 37.3, quality factor ( Q u × f ) of 9600 GHz, and temperature coefficient of resonant frequency (τ f ) of 223 ppm/°C, respectively. Ceramics with the composition 0.9TeO 2 –0.1SnTe 3 O 8 has ε r of 26.7, Q u × f of 10000 GHz, and a τ f of 32 ppm/°C when sintered at 650 °C/2 h. ZrTe 3 O 8 has relatively high ε r of 67.5, Q u × f of 1800 GHz, and high positive τ f of 362 ppm/°C.