光致发光
量子点
X射线光电子能谱
分析化学(期刊)
吸收边
带隙
发光
光谱学
价(化学)
材料科学
量子产额
吸收光谱法
化学
纳米技术
光电子学
核磁共振
荧光
物理
光学
有机化学
量子力学
色谱法
作者
Alexandra E. Raevskaya,Vladimir Lesnyak,Danny Haubold,Volodymyr Dzhagan,Oleksandr L. Stroyuk,Nikolai P. Gaponik,Dietrich R. T. Zahn,Alexander Eychmüller
标识
DOI:10.1021/acs.jpcc.7b00849
摘要
A size-selected series of water-soluble luminescent Ag–In–S (AIS) and core/shell AIS/ZnS quantum dots (QDs) were produced by a precipitation technique. Up to 10–11 fractions of size-selected AIS (AIS/ZnS) QDs emitting in a broad color range from deep-red to bluish-green were isolated with the photoluminescence (PL) quantum yield reaching 47% for intermediate fractions. The size of the isolated AIS (AIS/ZnS) QDs varied from ∼2 to ∼3.5 nm at a roughly constant chemical composition of the particles throughout the fractions as shown by the X-ray photoelectron spectroscopy. The decrease of the mean AIS QD size in consecutive fractions was accompanied by an increase of the structural QD imperfection/disorder as deduced from a notable Urbach absorption “tail” below the fundamental absorption edge. The Urbach energy increased from 90–100 meV for the largest QDs up to 350 meV for the smallest QDs, indicating a broadening of the distribution of sub-bandgap states. Both the Urbach energy and the PL bandwidth of the size-selected AIS QDs increased with QD size reduction from 3–4 to ∼2 nm, and a distinct correlation was observed between these parameters. A study of size-selected AIS and AIS/ZnS QDs by UV photoelectron spectroscopy on Au and FTO substrates revealed their valence band level E VB at ∼6.6 eV (on Au) and ∼7 eV (on FTO) pinned to the Fermi level of conductive substrates resulting in a masking of any possible size-dependence of the valence band edge position.
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