Growth of Aluminum Doped SiC Single Crystal By PVT Method

SiC has been well known as superior ceramic material with excellent thermal and electrical properties, high strength, good chemical resistance and high hardness. For these reasons, SiC is an ideal substrate for the fabrication of optoelectronic and power devices. N-type and p-type SiC wafers can be used for a variety of applications such as heat-resistant semiconductor device. So the doping level in the SiC crystal growth is an important element. N-type SiC wafer which can be doped by nitrogen or phosphorus and p-type by aluminium, boron, gallium or beryllium. In this study, SiC crystal growth was performed using SiC powder as the source material containing aluminum (120ppm) by PVT method. The PVT setup was inductively heated to temperature up to 2150°C (top of the crucible). Polymorphism of grown crystals were assessed using X-ray diffraction and Raman spectroscopy and the doping distribution of aluminum in SiC wafer was determined using hall measurement using the van der Pauw method and Raman spectroscopy. Absorption spectra of SiC crystals were measured by UV-VIS spectrophotometer.