A 76 x 77mm/sup 2/, 16.85 Million Pixel CMOS APS Image Sensor
作者
Suat U. Ay,Eric R. Fossum
标识
DOI:10.1109/vlsic.2006.1705291
摘要
A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world's largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer