电介质
电容器
储能
材料科学
图层(电子)
电极
薄膜电容器
电场
薄膜
光电子学
工作(物理)
电压
纳米技术
电气工程
化学
物理
工程类
热力学
量子力学
物理化学
功率(物理)
作者
Mark McMillen,A. M. Douglas,Tatiana Correia,Paul M. Weaver,Markys G. Cain,J. M. Gregg
摘要
The manner in which ultrathin films of alumina, deposited at the dielectric-electrode interface, affect the recoverable energy density associated with (BiFeO3)0.6–(SrTiO3)0.4 (BFST) thin film capacitors has been characterised. Approximately 6 nm of alumina on 400 nm of BFST increases the maximum recoverable energy of the system by around 30% from ∼13 Jcc−1 to ∼17 Jcc−1. Essentially, the alumina acts in the same way as a naturally present parasitic “dead-layer,” distorting the polarisation-field response such that the ultimate polarisation associated with the BFST is pushed to higher values of electric field. The work acts as a proof-of-principle to illustrate how the design of artificial interfacial dielectric “dead-layers” can increase energy densities in simple dielectric capacitors, allowing them to compete more generally with other energy storage technologies.
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