凝聚态物理
带隙
掺杂剂
铁磁性
磁性半导体
纤锌矿晶体结构
分析化学(期刊)
密度泛函理论
光致发光
作者
Bei Deng,Zhiyou Guo,Hong‐Bo Sun
摘要
Based on first-principles calculations, we present a study for p-type ZnO doping. We find that by doping Fe into the p-type ZnO, the resulting FeZn–2NO complex is a stable acceptor that has shallower ε(0/−) transition level and lower formation energy in comparison with the isolated NO. Moreover, the FeZn–VZn pair is another resulting defect that is a shallow acceptor, for which the minimum formation energy occurs at the O-rich limit. As parent defects, FeZn behave as deep donor that do not lead to overcompensation. Therefore, Fe-related acceptor complexes may be promising candidates for p-type ZnO doping.
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