铟
薄膜
材料科学
原子层沉积
氧化物
氧化铟锡
图层(电子)
薄膜晶体管
无机化学
纳米技术
光电子学
化学
冶金
作者
Won-Bum Lee,Hyun‐Jun Jeong,Hye‐Mi Kim,Jin‐Seong Park
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2022-04-07
卷期号:40 (3)
被引量:2
摘要
In this study, aluminum-indium oxide (AIO) semiconductors were fabricated by plasma-enhanced atomic layer deposition (ALD) using trimethyl (dimethylamino)propyl dimethyl indium and trimethylaluminum as the indium and aluminum precursors, respectively. The ALD supercycle consists of n indium oxide subcycles and one aluminum oxide subcycle, where n is 6, 9, 19, or 29. As the number of indium oxide subcycles decrease, the aluminum concentration in the AIO thin film increases and diminishes the thin film crystallinity. In addition, the chemical binding states of the AIO thin film also change with the number of indium oxide subcycles. AIO thin films made with a high number of indium oxide subcycles show stable aluminum oxide bonding and low oxygen related defects. In contrast, AIO thin films deposited with a small number of indium oxide subcycles form unstable AlOx, InOx, and oxygen related defects. The control of aluminum concentration in AIO thin films is essential to control the defect sites in the thin film. Finally, thin film transistors using AIO thin films are fabricated, demonstrating 2.16 V, 6.07 cm2/V s, and 1.50 V/decade with an optimized number of indium oxide subcycles.
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