材料科学
氧化态
接口(物质)
国家(计算机科学)
化学工程
工程物理
环境科学
计算机科学
复合材料
冶金
金属
算法
毛细管数
工程类
毛细管作用
作者
Shuai Li,Jun Luo,Tianchun Ye
出处
期刊:Nanomaterials
[MDPI AG]
日期:2023-05-06
卷期号:13 (9): 1568-1568
被引量:1
摘要
Detailed investigations of the pre-oxidation phosphorus implantation process are required to increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This study focuses on the SiO2/SiC interface characteristics of pre-oxidation using phosphorus implantation methods. The inversion channel mobility of a metal-oxide-semiconductor field effect transistor (MOSFET) was decreased via a high interface state density and the coulomb-scattering mechanisms of the carriers. High-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) were used to evaluate the SiO2/SiC interface's morphology. According to the energy-dispersive X-ray spectrometry (EDS) results, it was found that phosphorus implantation reduced the accumulation of carbon at the SiO2/SiC interface. Moreover, phosphorus distributed on the SiO2/SiC interface exhibited a Gaussian profile, and the nitrogen concentration at the SiO2/SiC interface may be correlated with the content of phosphorus. This research presents a new approach for increasing the oxidation rate of SiC and reducing the interface state density.
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