碳纳米管场效应晶体管
CMOS芯片
香料
晶体管
电子线路
计算机科学
电压
功率消耗
电子工程
功率(物理)
电气工程
工程类
物理
场效应晶体管
量子力学
作者
Imran Ahmed Khan,Owais Ahmad Shah,Amrita Rai,Puneet Sharma,Prakhar Mishra,Satvik Vats
标识
DOI:10.1109/cises58720.2023.10183403
摘要
Recent advances in CMOS technologies and beyond CMOS technologies have enabled the researchers to design the circuits for High Performance Applications. This research paper is focused on the new design of Odd Counter for High Performance Applications using CNTFET and the comparison of their performance with similar CMOS counterpart. In this paper, counters have been analyzed with the variation of temperature from 25°C to 100°C while the variation of supply voltages is from 0.7V to 1.3V. For all temperatures, proposed CNTFET Counter has the least power consumption, shortest delay, and lowest PDP. For all supply voltages, the proposed CNTFET Counter also has the least power consumption, shortest delay, and lowest PDP. SPICE has been utilized for simulating the Counters. Even though the fabrication is more complicated than CMOS counterparts, simulation results confirm usefulness of CNTFET Odd Counter for high speed and power efficient systems. This circuit is especially applicable where specified number of odd objects like vehicles having odd numbers is to be allowed.
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