High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3

Abstract Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide doping range to vary the effective normal field ( E eff ). The Hall mobility ( μ Hall ) in the high- E eff region of the MOSFETs annealed in phosphoryl chloride ( μ Hall = 41 cm 2 V −1 s −1 at E eff = 1.1 MV cm −1 ) is much higher than that of MOSFETs annealed in nitric oxide (NO) ( μ Hall = 14 cm 2 V −1 s −1 at E eff = 1.1 MV cm −1 ), suggesting that the trapped electrons act as strong Coulomb scattering centers for the MOSFETs annealed in NO and without POA.