Boosting the open-circuit voltage of Cu2ZnSn(S,Se)4 solar cell by Cd/NH3 soaking

Abstract In this paper, the open-circuit voltages ( V OC ) of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells were improved by soaking the CZTSSe films in Cd/NH 3 solutions before the deposition of buffer layers. The effects of Cd/NH 3 soaking on the properties of CZTSSe films and solar cells were investigated in depth. We found Cd/NH 3 soaking can promote downward band bending of the CZTSSe layer at the surface region. In addition, the Cd/NH 3 soaking can eliminate the deep level acceptor in CZTSSe and decrease the density of the defects at the absorber/buffer interface. These effects can significantly reduce the carrier recombination in the depletion region of CZTSSe solar cells. As a result, the V OC of CZTSSe solar cells were increased from ∼460 mV to ∼480 mV, the efficiency of the best CZTSSe solar cell was increased from 10.2% to 11.6% by the Cd/NH 3 soaking process.