Electro-Thermal simulation study of MOSFET modeling in Silicon and Silicon carbide

In this paper, a 2D electro-thermal coupling model of a MOSFET power device is presented using COMSOL Multiphysics software. The main objective of the model is to investigate and analyze the effect of temperature change on the electrical characteristics of a lateral MOSFET, visualize the heat distribution throughout the device, and calculate the peak temperature reached under extreme conditions. Thus, a comparison study is performed between Si and 6H-SiC based devices to highlight the effect of device material on its performance. The temperature distribution and the maximum temperature reached in both Si and 6H-SiC MOSFETs evaluate the reliability of the power component. The obtained results reveal lower drain currents and hot spot temperature values lower in 6H-SiC MOSFET.