栅氧化层
材料科学
沟槽
随时间变化的栅氧化层击穿
硬化(计算)
辐射硬化
光电子学
垂直的
氧化物
电气工程
功率MOSFET
辐射损伤
电压
辐射
MOSFET
工程类
复合材料
晶体管
冶金
光学
物理
探测器
几何学
数学
图层(电子)
作者
Yuan Wang,Jingyu Tao,Yingjun Zhong,Xun Zhang,Tingjiao Xiong,Ruisen Yin,Yanlin Zhang,Shengdong Hu
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2024-01-01
卷期号:71 (1): 72-79
标识
DOI:10.1109/tns.2023.3345348
摘要
This article presents the results of heavy-ion experiments conducted on a 100-V split-gate trench VDMOS at various bias voltages. The experimental findings reveal that when an incident heavy-ion strike is perpendicular to the device, no failures were attributed to Single Event Burnout (SEB), whereas all failures were attributed to Single Event Gate Rupture (SEGR). Subsequent fault analysis indicates the gate oxide on the upper side wall in the termination has suffered damage. To mitigate this issue, a SEGR hardened termination structure with double p-columns is proposed and analyzed using Sentaurus TCAD. The introduction of double p-columns creates a depletion region near the gate oxide, effectively reducing the oxide field below the critical breakdown field. The effectiveness of the proposed radiation-hardened structure in improving SEGR tolerance has been analyzed.
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