Boron- and Nitrogen-Embedded Polycyclic Arenes as an Emerging Class of Organic Semiconductors

The development of novel organic semiconductors has continuously promoted the field of organic optoelectronics. During the past decade, boron- and nitrogen-embedded (BN-embedded) polycyclic arenes have attracted considerable attention, enriching the structural diversity of organic semiconductors and providing a broad space for tuning their optoelectronic properties. The application of BN-embedded conjugated materials in different optoelectronic devices has achieved excellent performance, e.g., high charge-carrier mobilities (μ > 1.0 cm2 V–1 s–1) in organic field-effect transistors (OFETs), ultrapure electroluminescence (full-width at half-maximum ≤ 18 nm) in organic light-emitting diodes (OLEDs), and high power conversion efficiency (PCE > 19%) in organic photovoltaics (OPVs). These advances make BN-embedded conjugated materials a promising class of high-performance organic semiconductors. Nevertheless, the inherent relationship between different BN-doping modes and their optoelectronic properties has never been systematically discussed. In this Perspective, we aim to present an overview of this unique family of materials by selecting representative examples. We will first outline the characters of different BN-doping modes, discuss their effect on the electronic structures and properties of polycyclic arenes, and finally showcase the advanced applications of this emerging class of materials in organic optoelectronic devices. We hope to bring together the organic and materials communities to further promote the development of high-performance BN-embedded organic semiconductor materials.