极紫外光刻
光掩模
极端紫外线
光学
材料科学
X射线光电子能谱
临界尺寸
反射计
平版印刷术
光电子学
纳米技术
物理
计算机科学
抵抗
激光器
核磁共振
时域
图层(电子)
计算机视觉
作者
Chien‐Ching Wu,Markus Bender,R. Jonckheere,Frank Scholze,H. H. P. Th. Bekman,Michel van Putten,Rory de Zanger,Rob Ebeling,J. Westerhout,Kyri Nicolai,Jacqueline van Veldhoven,Véronique de Rooij-Lohmann,O. Kievit,Alex Deutz
摘要
TNO has built EBL2, an EUV exposure facility equipped with an in vacuo X-ray photoelectron spectroscopy setup (XPS) and an in-situ ellipsometer. EBL2 enables lifetime testing of EUV optics, photomasks, pellicles and related components under development in relevant EUV scanner and source conditions, which was previously not available to industry. This lifetime testing can help the industry to prepare for high volume production using EUV lithography by bringing forward information about material behavior which facilitates the development cycle. This paper describes an EUV photomask lifetime test performed at EBL2. The mask was exposed to different EUV doses under a controlled gas and temperature environment. To investigate how EUV light interacts with the mask, various analysis techniques were applied before and after EUV exposure. In-situ XPS was used to investigate elemental compositions of the mask surface. An ex-situ critical dimension scanning electron microscope (CD-SEM) and an atomic force microscope (AFM) were used to explore the impact of EUV light on critical dimensions (CD) and feature profiles. In addition, EUV reflectometry (EUVR) was used to investigate the change of reflectivity after EUV exposures. The exposure conditions are reported, as well as an analysis of the effects observed.
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