Femtosecond laser micromachining of silicon

Results are presented for micromachining of single crystal (<100> orientation) of silicon using a femtosecond Ti:Sapphire laser from Spectra Physics of 2mJ energy, 100 fs pulse width, 10 kHz repetition rate and wavelength of 790 nm. Some of the results include: measurements of femtosecond laser characteristics, effect of beam focus position on micromachined line width, dependence of ablated volume on number of laser pulses and process parameters for achieving sub micron line widths.