U-shaped Reconfigurable Field-effect Transistor

We propose a novel reconfigurable fieldeffect transistor (RFET) featuring two verticallystacked gates and a U-shaped nanowire channel. Conventional RFETs have a relatively large unit cell size due to their configuration with multiple gates. However, the proposed device can solve this inherent disadvantage of RFET. In addition, it can have a long enough channel without additional area, so that excellent characteristics can be obtained without the short channel effects. The characteristics of the proposed device were examined by 3-D technology computer-aided design (TCAD) device simulation. The effect of some device parameters on the device performance were investigated. Also, the fabrication method is proposed.