Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers

In this work, we report the demonstration of quaternary GaInAsSb-based mid-wavelength infrared photodetectors with cutoff wavelengths longer than 4 μm at 300 K. Both interband cascade infrared photodetector (ICIP) with a three-stage discrete absorber architecture and conventional one-stage detector structures have been grown by molecular beam epitaxy and investigated in experiments for their electrical and optical properties. High absorption coefficient and gain were observed in both detector structures. The three-stage ICIPs had superior carrier transport over the one-stage detectors. A detectivity as high as 1.0 × 109 cm Hz1/2 W−1 was achieved at 3.3 μm for both one- and three-stage detectors under zero bias at 300 K. The implications of these results are discussed along with potential of GaInAsSb-based ICIPs for high-speed applications.