Structural evaluation of defects in β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth process

Abstract We have structurally evaluated β-Ga 2 O 3 crystals grown by edge-defined film-fed growth process using etch pitting, focused ion beam scanning ion microscopy, transmission electron microscopy, and related techniques. We found three types of defects: arrays of edge dislocations corresponding to etch pit arrays on -oriented wafers, platelike nanopipes corresponding to etch pits revealed on the (010)-oriented wafers, and twins including twin lamellae.