铁电性
单层
材料科学
单位(环理论)
纳米技术
结晶学
光电子学
电介质
化学
心理学
数学教育
作者
Chuan-Bao Zhang,Shunhong Zhang,Ping Cui,Zhenyu Zhang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-07-05
卷期号:24 (28): 8664-8670
标识
DOI:10.1021/acs.nanolett.4c02041
摘要
Stabilization of multiple polarization states at the atomic scale is pivotal for realizing high-density memory devices beyond prevailing bistable ferroelectric architectures. Here, we show that two-dimensional ferroelectric SnS or GeSe is able to revive and stabilize the ferroelectric order of three-dimensional ferroelectric BaTiO
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