Structural designs of AlGaN/GaN nanowire-based photoelectrochemical photodetectors: carrier transport regulation in GaN segment as current flow hub

The AlGaN/GaN p–n junction has received extensive attention due to its capability of rapid photogenerated carrier separation in photodetection devices. The AlGaN/GaN heterojunction nanowires (NWs) have been especially endowed with new life for distinctive transport characteristics in the photoelectrochemical (PEC) detection field. A self-powered PEC ultraviolet photodetector (PEC UV PD) based on the p-AlGaN/n-GaN heterojunction NW is reported in this work. The n-GaN NW layer plays a crucial role as a current flow hub to regulate carrier transport, which mainly acts as a light absorber under 365 nm and carrier recombination layer under 255 nm illumination, which can effectively modulate photoresponsivity at different wavelengths. Furthermore, by designing the thicknesses of the NW layer, the photocurrent polarity reversal was successfully achieved in the constructed AlGaN/GaN NW PEC UV PD at two different light wavelengths. In addition, by combining with platinum decoration, the photoresponse performance could be further enhanced. Our work provides insight into transport mechanisms in the AlGaN/GaN NW PEC system, and offers a feasible and comprehensive strategy for further exploration of multifunctional optoelectronic devices.