量子点
同质结
兴奋剂
混合太阳能电池
太阳能电池
聚合物太阳能电池
材料科学
量子点太阳电池
纳米技术
开路电压
能量转换效率
钝化
活动层
多激子产生
光电子学
图层(电子)
电压
电气工程
工程类
薄膜晶体管
作者
Neha V. Dambhare,Ashish Sharma,Chandan Mahajan,Arup K. Rath
标识
DOI:10.1002/ente.202200455
摘要
Progress in device engineering and surface passivation strategies has led to steady progress in colloidal quantum dot (QD) solar cells. Bulk homojunction (BHJ) device architecture has several advantages over the conventional planar junction in developing QD solar cells. Herein, surface ligand chemistry is utilized to control the doping type and dispersibility of oppositely doped PbS QDs to develop BHJ solar cells. Thiocyanate and thiol ligand combination is introduced to develop p‐PbS QD ink, which is blended with halide‐passivated n‐PbS QDs to build BHJ solar cells. It is shown that BHJ solar cells are benefited from high energy offset and higher hole mobility. This leads to the superior carrier extraction from a thicker active layer without compromising fill factor and open circuit voltage. Power conversion efficiency has reached 10.7% in 530 nm‐thick BHJ solar cells, a 24% improvement over the best performing planar solar cells. With the help of the 1D solar cell capacitance simulator, it is shown that a 15% efficient QD solar cell can be realized by further improving the hole mobility above 0.1 cm 2 V −1 s −1 .
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