铁电性
材料科学
范德瓦尔斯力
拉曼光谱
合金
凝聚态物理
居里温度
结晶学
半导体
光电子学
光学
铁磁性
化学
复合材料
物理
电介质
有机化学
分子
作者
Eli Sutter,Pramod Ghimire,Peter Sutter
出处
期刊:Nano Letters
[American Chemical Society]
日期:2025-05-02
卷期号:25 (19): 8012-8018
被引量:4
标识
DOI:10.1021/acs.nanolett.5c01647
摘要
Single-layer monochalcogenides are predicted to be in-plane ferroelectrics but are challenging to obtain in the 2D limit. Recent work showed that synthetic few-layer SnSe and SnS flakes also support ferroelectricity. Key properties such as the Curie temperature may become tunable via anion substitution in SnS1-xSex alloys. Hence, protocols need to be developed that produce ferroelectric few-layer alloy crystals. Here, we report SnS1-xSex alloy flakes across the entire composition range obtained by a highly reproducible growth process using mixed SnS/SnSe precursors. Characterization by electron microscopy and diffraction, X-ray dispersive spectroscopy, and Raman spectroscopy shows the flakes to be high-quality single crystals whose phonon modes and optical bandgaps interpolate between SnSe and SnS. Thin SnS1-xSex flakes across all compositions carry ubiquitous stripe domain patterns, i.e., the flakes are ferroelectric with twin domain walls. Such composition-tunable alloy flakes can support research on the fundamental mechanisms of in-plane ferroelectricity in few-layer monochalcogenide van der Waals semiconductors.
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