UV‐Ozone Surface Modification to Suppress the Crosstalk in the Sb2Se3‐Based Broadband Photodetector Array

Abstract As a promising material of photodetectors (PDs), antimony selenide (Sb 2 Se 3 ) and its heterostructure own the advantages of low cost, high absorption coefficient, and excellent optoelectrical properties. However, the imaging application of the Sb 2 Se 3 ‐based PD array is blocked by the key barrier of crosstalk following the single‐pixel device study. Here, the crosstalk in the Sb 2 Se 3 ‐based PD array is suppressed with a facile surface modification. Using the UV‐ozone treatment, compatible with integrated circuit production, the ZnO/Sb 2 Se 3 /Sb 2 O 3 heterostructure is fabricated via the oxidation of the Sb 2 Se 3 surface, and owns enhanced detectivity of 3.63 × 10 11 Jones and broadband photodetection from UVto near‐infrared region. Moreover, the electrical crosstalk between the pixels is suppressed from 91.06% to 5.37%, improving the imaging contrast. Despite the additional oxide layer, the response time remains at the nanosecond level of 298 and 287 ns, facilitating applications such as real‐time imaging. This work provides an effective way with surface modification to suppress the crosstalk in the Sb 2 Se 3 ‐based PD array and breaks the key limit in its photoelectric imaging applications. It is also applicable to various materials, such as GeSe, Sb 2 Te 3 , and Bi 2 Se 3 , which will also open a new window for semiconductor industrialization.