A Novel High-Pressure Resonant Microsensor Based on Volume Compressed Sensing

This paper reports a novel high-pressure silicon resonant pressure sensor based on the principle of volume compressed sensing, adopting a diaphragm-free structure to achieve wide measurement range of 0.1∼70MPa by avoiding stress concentration caused by pressure sensitive diaphragm. A couple of Y-type micro beams has been designed as anchors of a resonator to reduce the compressive stress on the resonator and exhibit an excellent appropriate pressure sensitivity at ∼100Hz/MPa (∼1086ppm/MPa). The resonator is vacuum packaged with a silicon cap based on wafer-level eutectic bonding, result in a low temperature disturbance of about −1Hz/°C(−11ppm/°C). Finally the fabricated microsensor has been characterized both in open-loop and closed-loop systems and exhibited a high measurement accuracy of 0.01%FS (0.1 to 7MPa) under temperature range(−20 to 60°C) with a temperature compensation.