热电效应
材料科学
纳米技术
工艺工程
工程物理
业务
工程类
物理
热力学
作者
Xuemei Wang,Gang Wu,RuoYu Wang,Liang Xu,Haoyang Hu,Peng Sun,Xiaojian Tan,Guoqiang Liu,Jun Jiang
标识
DOI:10.1016/j.cej.2022.139916
摘要
• The integrated multi-strategy for thermoelectrics is successfully applied. • A high maximum ZT of 1.52 at 833 K is achieved in the designed compound. • The thermal conductivity of the designed compound is significantly reduced. SnTe has been regarded as a Lead-free substitution for the outstanding thermoelectrics PbTe, owing to their similar crystal and band structures. However, the performance of pristine SnTe is limited by its intrinsic high carrier concentration, high thermal conductivity and low Seebeck coefficient. In this work, the integrated multi-strategy, including band convergence, defect engineering and carrier manipulation, is applied to optimize the overall thermoelectric properties of SnTe. In practice, Cd-doping, Cu 2 Se nano-precipitate, and Sb-doping are introduced step by step to achieve the goals. Owing to the high efficiency of Cd-doping for band convergence and Cu 2 Se nano-precipitate for defect engineering, the obtained compounds exhibit the high carrier mobility, about 50 cm 2 V −1 s −1 . Finally, a high peak ZT of 1.52 at 833 K is achieved in (Sn 0.86 Cd 0.04 Sb 0.1 Te) 0.96 (Cu 2 Se) 0.04 , accompanied with a low thermal conductivity of 1.3 W m −1 K −1 .
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