Interfacial TADF Exciplex as a Tool to Localize Excitons, Improve Efficiency, and Increase OLED Lifetime

In this work, we employ a thermally activated delayed fluorescence (TADF) exciplex formed between the emissive layer (EML) host, 26DCzPPy, and the electron transport layer (ETL) 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine at the interface between the EML and the ETL to improve the stability and efficiency of a phosphorescence organic light-emitting diode based on Ir(dmpq) 2 acac. We show that the presence of the TADF exciplex at the EML–ETL interface induces an efficient localization of the recombination zone, which is confined within the 5 nm thick EML. Furthermore, the TADF exciplex allows harvesting of the holes and electrons that piled up at the EML–ETL interface and transfers the resultant excited state energy to the phosphorescent emitter through Förster and/or Dexter energy transfer. This approach effectively improves the LT90 of devices from <1 min to 6 h by limiting recombination processes outside of the 5 nm EML.