INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtOx FILMS

PtO x films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O 2 mixture atmosphere at substrate temperatures ranging from 200 ∘ C to 400 ∘ C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtO x films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtO x films were mainly composed of PtO and PtO 2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.