ChemInform Abstract: Improvement of Dielectric Strength of Trench Capacitors by Using Rapidly Grown SiO2 Films.

Abstract Barrel‐shaped and tapered trenches are formed on p‐type Si wafers by reactive ion etching and ∼15 nm thick SiO2 films are grown on the trenched surfaces by rapid thermal oxidation at 1100 °C in a dry O2 ambient.