Band alignment of InN∕GaAs heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the InN∕GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94±0.23eV. The conduction band offset is deduced from the known VBO value to be 1.66±0.23eV, and a type-II band alignment forms at the InN∕GaAs heterojunction.