A new method for characterizing thermoelectric materials is described. By using non-contact radiative heat flow, parasitic heat flows that will otherwise cause error can be reduced to negligible levels. Having precise knowledge of the steady-state heat flows under conditions with low parasitics allows for accurate determination of thermal conductivity as well as bulk and thin-film device performance metrics including coefficient of performance. Measurement of thermal conductivity of bulk (Bi,Sb)2(Se,Te)3 alloy sample was 1.49 Watt/meter-K.