DIELECTRIC PROPERTIES OF PARAELECTRIC Ba(Zr,Ti)O 3 THIN FILMS FOR TUNABLE MICROWAVE APPLICATIONS

Paraelectric Ba(Zr,Ti)O3 [BZT] thin films were prepared on MgO substrates by pulsed laser ablation and their dielectric characteristics and tunabiltiy were investigated as a function of the Zr content. Dielectric properties of BZT thin films were measured under dc bias using planar interdigitated capacitor. The excellent tunable dielectric characteristics were achieved for x = 0.25 at room temperature; tunability ∼74.5%, tanδ ∼0.0535 at 100 kHz, indicating that it is a promising canditate for voltage tunable dielectric working at room temperature.