2D Layered Semiconductors beyond MoS2

Two-dimensional (2D) layered materials, particularly semiconducting transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, have already attracted tremendous research efforts, due not only to their atomically thin thickness, but also to many exciting new phenomena associated with new materials. Recent advances in heterostructures formed by vertically stacked or laterally stitched 2D semiconductors further show their promise for novel device applications. Here, I will present our recent endeavors on the material synthesis and fundamental study of 2D TMDs grown by chemical vapor deposition (CVD). In particular, I will present CVD grown noble metal dichalcogenides, such as PtSe2 and PdSe2, with strongly layer number dependent properties. This new-type 2D material is promising for realizing metal-semiconductor junctions by local engineering the semiconducting and metallic phases via layer control, providing a feasible scheme to solve the issue of high metal contact resistance commonly occurred in 2D semiconductors.