Performance of IQ.~,G%.~~AS and InP Junction Field- Effect Transistors for Optoelectronic Integrated Circuits I. Device Analvsis

Absfrucf-We have developed an analytical model to study Ino.s3Gan,47As and InP junction field effect transistors (JFET’s) for use in InP-based optoelectronic integrated circuits (OEIC’s). This model includes the effects of channel resistance and hand-to-hand tunneling. The agreement between the calculations and experimental results reported for Ino.s3Gao.47As and InP JFET’s supports the validity of the model. In addition, we discuss the optimum design for Inn,&a,,,,,As and InP JFET’s, and compare their performance quantitatively. In order to prevent device performance from being degraded by the effects of tunneling, the optimum channel dopings of In,,,3Gan.47As and InP JFET’s are found to be 7 X 10l6 and 5 X lOI7 cm-3, respectively. Also, for Ino,53Gan,,,As JFET’s not operated in the tunneling regime, these devices show at least a 40-percent higher efficiency than InP JFET’s in terms of the power dissipated per transconductance. By this and other criteria, we conclude that Ino.53Gao.47As JFET’s are well suited for very high density monolithic integration, where power efficiency must be high.