Enhanced Electrical Properties of Metal‐Organic Chemical Vapor Deposition‐Grown MoS2 Thin Films through Oxygen‐Assisted Defect Control

Abstract Although the synthesis of MoS 2 thin film with a large area and excellent uniformity has been achieved through advanced synthesis techniques, such as metal–organic chemical vapor deposition (MOCVD), intrinsic defects such as vacancies and grain boundaries which degrade electrical performance still inevitably result from the process. In this paper, a method for controlling intrinsic defects in MOCVD‐grown MoS 2 thin film to achieve enhanced electrical performance is reported. After applying the defect‐control process, high‐resolution transmission electron microscopy confirms that the MoS 2 thin film maintains a hexagonal lattice structure without any destruction or distortion, indicating that this is a nondestructive method. In addition, the MoS 2 thin film subjected to the defect‐control process exhibits enhanced n ‐type characteristics in the photoluminescence and ultraviolet photoelectron spectroscopy analyses. Field‐effect transistors using the defect‐controlled MoS 2 as the channel also show enhanced electrical performance, arising from reductions in sheet and contact resistances of 21% and 46%, respectively. This improvement in the resistances leads to an increase in field‐effect mobility from 3.2 up to 11.8 cm 2 V −1 s −1 .