电阻抗
波形
MOSFET
计算机科学
热阻
电子工程
功勋
功率(物理)
功率MOSFET
热的
电气工程
工程类
物理
电压
电信
晶体管
雷达
量子力学
气象学
计算机视觉
作者
Philipp Steinmann,Satyaki Ganguly,Brett Hull,Khiem Lam,Daniel J. Lichtenwalner,Jaehyung Park,Rahul Potera,Jim Richmond,Sei‐Hyung Ryu,Shadi Sabri,Charles Van Brackle,Edward Van Brunt,Elizabeth A. Williams
标识
DOI:10.1109/ted.2022.3174516
摘要
We generalize and refine an analytical model to describe unclamped inductive switching (UIS) events in power MOSFETs and derive a novel, fast method to extract thermal impedance and series resistance from the UIS waveform. We show excellent agreement between model and measurement for SiC MOSFETs. The method allows for the comparison of thermal impedance measurements of packaged parts to that of formerly not easily accessible waferlevel die. The model allows to evaluate UIS ruggedness and provides insight into the nature of ruggedness limitations. A figure of merit for UIS ruggedness is provided and different MOSFET architectures are compared with respect to UIS ruggedness.
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