Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI 2 /MoS 2 into the CH 3 NH 3 PbI 3 /MoS 2 heterostructures via CH 3 NH 3 I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH 3 NH 3 PbI 3 /MoS 2 . Both MoS 2 and CH 3 NH 3 PbI 3 related photoluminescence (PL) intensity quenching in CH 3 NH 3 PbI 3 /MoS 2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH 3 NH 3 PbI 3 is opposite to that of MoS 2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH 3 NH 3 PbI 3 /TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications. • Atomically thin CH 3 NH 3 PbI 3 are templated by exfoliated MoS 2 flakes in vacuum sequential deposition method. • Intensity quenching of both MoS 2 and CH 3 NH 3 PbI 3 PL peaks implies a Type-II energy level alignment at the interface. • Temperature-dependent emission properties of CH 3 NH 3 PbI 3 are opposite to those of MoS 2 .