Enhancing the performance of CdSe/ZnS quantum-dot light-emitting diodes by utilizing hole injection layers fabricated with a solution-processed mixture of vanadium oxide and molybdenum oxide

We developed a high-performance CdSe/ZnS quantum-dot light-emitting diode (QLED) incorporating a hole injection layer (HIL) composed of a solution-processed vanadium oxide (VO) and molybdenum oxide (MoO) mixture. The QLED with a VO:MoO ratio of 1:1 in the HIL demonstrated a current efficiency of 62.0 cd/A, representing a 60% improvement over the QLED utilizing poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as the HIL. Besides improved performance, the substitution of the highly reactive PEDOT: PSS with chemically stable metal oxides in HIL fabrication is anticipated to enhance device reliability. The highest occupied molecular orbital level of the VO:MoO ratio of 1:1 HIL was higher than that of HILs with other mixing ratios. Additionally, the VO:MoO ratio of 1:1 HIL exhibited higher oxidation number states compared to HILs with other mixing ratios. These characteristics contributed to the superior performance of the QLED with the VO:MoO ratio of 1:1 HIL. Our approach, which employs chemically stable metal oxides as HIL materials for high-performance QLEDs, can advance future QLED technology.