Ultra-High Endurance (>1012) and High Drive-Current Selector in Sub-30nmΦ Cell using Stable Oxide Doped with As-Se Free High Melting-Point Compound

We demonstrate ultra-high endurance selector with excellent scalability toward high-performance cross-point storage class memory (SCM). By employing stable oxide doped with high melting-point $\left(T_{\mathrm{m}}\right)$ compound as a selector, atomic diffusion during cycling is strongly suppressed even for small cell (sub-30nm$\phi$) and high drive current, which is confirmed by thermal TCAD and ab initio calculations. The fabricated sub-30nm$\phi$ pillar As-Se free selector achieves 10 ¹² cycles, low half-selected current (~4nA) and high drive current density (~15MA/cm ² ).