An E-Band Reconfigurable Reflectarray Antenna Using p-i-n Diodes for Millimeter-Wave Communications

In E-band millimeter-wave (mmWave) frequency, conventional phased array antennas face challenges, including increased cost, reduced performance, and complex fabrication. In this communication, based on p-i-n diodes and a hybrid fabrication process, a 1-bit reconfigurable reflectarray antenna (RRA) operating at E-band is designed, fabricated, and measured. To ensure a stable 1-bit phase shift, the element mirroring method is adopted. The reconfigurable element is designed with two p-i-n diodes soldered at specific locations to utilize the third resonant mode. Besides, a combination of printed circuit board (PCB) fabrication and laser engraving fabrication is used, achieving both high accuracy and low cost. Experimental results demonstrate a gain of 16.8 dBi at 72.8 GHz with 5 GHz bandwidth, and beam scanning angles of − 70° to 70° in full space. The proposed E-band RRA has significant potential for the next generation of wireless communication.