Enhanced Monolithic Bidirectional Dual-Gate GaN HEMT Switch with Split Source Field Plates for Current Collapse Suppression

This paper presents a Monolithic Bidirectional Dual-Gate (MBD) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) switch enhanced with Split Source Field Plates (SSFPs). The monolithic architecture reduces both device area and on-resistance ($\mathrm{R}_{\text{on}}$) compared to conventional discrete topologies. The inclusion of SSFPs effectively moderates electric field concentration, mitigates current collapse, and preserves low Ron under high-voltage off-state stress. Experimental results show that the proposed switch limits Ron degradation to just 42 % after repeated current collapse events. Additionally, the device area is reduced by 31% relative to back-to-back discrete GaN HEMTs. These advancements improve both efficiency and integration, positioning the proposed switch as a compelling solution for next-generation bidirectional power applications.