各向异性
材料科学
光电子学
平面的
光电探测器
正交晶系
半导体
反平行(数学)
失真(音乐)
带隙
异质结
堆积
密度泛函理论
光学
工作(物理)
电子能带结构
载流子
格子(音乐)
凝聚态物理
光探测
纳米技术
电荷(物理)
电子结构
极化(电化学)
宽禁带半导体
作者
Huai Yang,Wenhao Li,Mei Wang,Xupeng Chen,Baohua Tan,Zhengwang Cheng,Changcun Han,Yizhong Huang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-12-02
卷期号:19 (50): 42299-42309
标识
DOI:10.1021/acsnano.5c13668
摘要
The growing demand for high-performance optoelectronic devices has spotlighted the scarcity of two-dimensional (2D) materials with robust in-plane anisotropy and stability, as traditional materials with one-dimensional (1D) distorted chains in parallel or antiparallel arrangements often fall short in these aspects. This work reports 2D AuPS, a semiconductor with an orthorhombic Pbca structure, featuring a four-layer stacked architecture and a mixed-coordination network integrating Au3+ square planar coordination with P1-/S2- trigonal noncoplanar coordination. This design induces stereoscopic distortion, creating a nonuniform electronic density gradient that enhances in-plane anisotropy. 2D AuPS leverages its indirect bandgap to facilitate efficient charge carrier separation, with its puckered structure imparting strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating anisotropic ratios of 5, 12, and 16 for absorptive dichroism, conductivity, and photocurrent, respectively. The AuPS-based photodetector exhibits high performance underpinned by its ambient stability, positioning it as a candidate material for polarization-sensitive nanoelectronic and optoelectronic applications.
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