TiSe 2 has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically be expected, while a lack of “smoking-gun” signatures for the importance of the electron-hole interaction in driving the phase transition has rendered it challenging to distinguish the EI from the conventional charge-density wave (CDW) phase. Here, we demonstrate a new approach, exploiting the susceptibility of excitons to dielectric screening. We combine mechanical exfoliation with molecular-beam epitaxy to fabricate ultraclean van der Waals heterostructures of monolayer (ML)
TiSe 2 /graphite and ML
TiSe 2 / h -BN. We observe how the modified substrate screening environment drives a renormalization of the quasiparticle band gap of the
TiSe 2 layer, signifying its susceptibility to Coulomb engineering. The temperature-dependent evolution of its electronic structure, however, remains unaffected, indicating that excitons are not required to drive the CDW transition in
TiSe 2 .