Surface Electronic Properties of Electrolytically Hydrogen Terminated Si(111)

Measurements of the surface state distribution and of the fixed surface charge of a hydrogen terminated Si(111) surface are reported. The investigations were carried out by the large signal surface photovoltage technique. The electronic properties of the electrolytically prepared n‐Si(111) surface are compared after storage in nitrogen and in air and after hot water oxidation. The surface state distribution of the hydrogen‐terminated Si(111) surface exposed to is nearly intrinsic, and the density of states at midgap is 1.7 · 10 11 eV −1 cm −2 . The exposure to air induces extrinsic surface states in the midgap region of the distribution.