A hybrid MoS2nanosheet–CdSe nanocrystal phototransistor with a fast photoresponse

2-Dimensional (2D) and 0-dimensional (0D) hybrid nanostructures have been reported as promising new systems for highly-sensitive and wavelength-tunable photodetectors. Although the performance of hybrid photodetectors was enhanced by charge injection from 0D nanocrystals (NCs) to 2D nanosheets (NSs), the response time of hybrid photodetectors is still very slow due to the trapping and leakage of residual carriers at the interfaces of the hybrid materials. Here, we demonstrate a MoS2/CdSe hybrid phototransistor with enhanced responsivity of 2.5 × 105 A W−1 and detectivity of 1.24 × 1014 Jones. In addition, the device exhibited a fast rise (τrise) and decay time (τdecay) of 60 ms, respectively. The mechanism for the improved photoresponse time has been discussed using a charge injection model in an n–n type heterojunction energy band diagram of hybrid materials.