Solution-processed SnO 2 /SnS 2 bilayer-based robust memristors for reliable neuromorphic computing

cycles, and robust retention. Beyond conventional memory behavior, the bilayer devices emulate essential synaptic functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and spike-timing dependent plasticity (STDP), and achieve ∼93% inference accuracy in artificial neural network tasks.