Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Abstract Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer‐scale continuous few‐layer PtSe 2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n‐doping and p‐doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe 2 films have been systematically studied by fabricating top‐gated field effect transistors (FETs). The device current on/off ratio is optimized in two‐layer PtSe 2 FETs, and four‐terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm 2 V −1 s −1 for p‐type and n‐type FETs, respectively) with a nearly symmetric p‐type and n‐type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe 2 , a logic inverter and vertically stacked p–n junction arrays are demonstrated. These results validate that PtSe 2 is a promising candidate among the family of TMDs for future functional electronic applications.